Measurement and Extraction of Parasitic Parameters of Quasi-Vertical Schottky Diodes at Submillimeter Wavelengths

This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are quasi-vertical gallium arsenide Schottky diodes integrated on silicon. The technique utilizes measurements of coplanar waveguide-fed passive structures in the WR-2.2 band (325-500 GHz), which are fabricated on the same wafer as the diodes. These structures consist of short- and...