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Robert M. Weikle
University of Virginia
191Publications
23H-index
2,302Citations
Publications 186
Newest
#1Michael E. Cyberey (UVA: University of Virginia)H-Index: 3
#2Tannaz Farrahi (UVA: University of Virginia)H-Index: 4
Last.Arthur W. Lichtenberger (UVA: University of Virginia)H-Index: 16
view all 6 authors...
The current state-of-the-art approach for superconductor–insulator–superconductor (SIS) junction fabric-ation is based on magnetron sputtering and the Gurvitch Al overlayer trilayer process, where an Al overlayer is deposited onto the Nb base electrode in order to subsequently grow a critical \sim1-nm AlO _{x}or AlN tunnel barrier. While the switch from AlO _xto AlN barriers has significantly increased the achievable critical current density, and significant research has been performed ...
1 CitationsSource
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#1Michael E. Cyberey (UVA: University of Virginia)H-Index: 3
#2Tannaz Farrahi (UVA: University of Virginia)H-Index: 4
Last.Arthur W. Lichtenberger (UVA: University of Virginia)H-Index: 16
view all 7 authors...
High energy gap Nb-based superconducting alloys with low normal state resistivity are fundamentally important for realization of low-loss high frequency circuits operating above the typical ∼670 GHz gap frequency of elemental Nb. NbTiN has been shown to have a superconducting energy gap nearly twice that of elemental Nb, and is emerging as an important material for various detector and superconducting computing technologies. In this paper, we report on the growth of high-quality face-centered cu...
1 CitationsSource
#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 6 authors...
This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are quasi-vertical gallium arsenide Schottky diodes integrated on silicon. The technique utilizes measurements of coplanar waveguide-fed passive structures in the WR-2.2 band (325–500 GHz), which are fabricated on the same wafer as the diodes. These structures consist of short- and open-circuited terminations that allow direct measurement of the...
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Jun 1, 2019 in IMS (International Microwave Symposium)
#1Chunhu Zhang (UVA: University of Virginia)H-Index: 7
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 7 authors...
This paper demonstrates the first differential on-wafer probe with integrated balun operating in the WR-3.4 (220 – 330 GHz) waveguide band. The probe employs integrated balun circuitry to convert the single-ended signal from the waveguide output of a VNA into differential stimuli at the on-wafer transmission line output. The design approach, fabrication method, and measured results are described in this paper.
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#1Linli Xie (UVA: University of Virginia)H-Index: 4
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 8 authors...
An approach for one port on-wafer electronic calibration at submillimeter wavelengths is described. Quasivertical GaAs Schottky diodes integrated onto silicon serve as the electronic calibration standard. The S-parameters of the diode standards are characterized over the WM-570 (325—500 GHz) band as a function of bias and subsequently used as the standard for one-port calibration. Comparisons of the error coefficients derived using the diode standard are shown to be in good agreement with those ...
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#1Robert M. Weikle (UVA: University of Virginia)H-Index: 23
#2Souheil NadriH-Index: 3
Last.Mona ZebarjadiH-Index: 21
view all 9 authors...
Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is...
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#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Christopher M. Moore (UVA: University of Virginia)H-Index: 8
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 11 authors...
This paper presents the first thermal characterization of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized using a thermoreflectance measurement technique. Heating and cooling temperature profiles and 2-D temperature maps are obtained for 5.5- \mu \text{m}diameter diodes. From the measurements, we extracted the device thermal resistances, anode temperatures, and thermal time constants. Equivalent circuit and finite-element models are developed...
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#1Robert M. Weikle (UVA: University of Virginia)H-Index: 23
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Charles L. Brown (UVA: University of Virginia)H-Index: 5
view all 10 authors...
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#1Yukang Feng (UVA: University of Virginia)H-Index: 2
#2Matthew T. Dejarld (NRL: United States Naval Research Laboratory)H-Index: 1
Last.N. Scott Barker (UVA: University of Virginia)H-Index: 11
view all 8 authors...
In this paper, millimeter-wave detection is conducted for the first time on the basis of graphene photo- thermoelectric effect. Upon receiving millimeter- wave radiation, graphene generates hot carriers which diffuse towards the nearby drain and source contact metals, and causing a differential drain -source voltage. To optimize detection performance, devices with different drain and source contact metals as well as graphene geometries are designed and tested. Measured results show that using Yb...
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