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Souheil Nadri
University of Virginia
18Publications
3H-index
38Citations
Publications 18
Newest
#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 6 authors...
This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are quasi-vertical gallium arsenide Schottky diodes integrated on silicon. The technique utilizes measurements of coplanar waveguide-fed passive structures in the WR-2.2 band (325–500 GHz), which are fabricated on the same wafer as the diodes. These structures consist of short- and open-circuited terminations that allow direct measurement of the...
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#1Linli Xie (UVA: University of Virginia)H-Index: 4
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 8 authors...
An approach for one port on-wafer electronic calibration at submillimeter wavelengths is described. Quasivertical GaAs Schottky diodes integrated onto silicon serve as the electronic calibration standard. The S-parameters of the diode standards are characterized over the WM-570 (325—500 GHz) band as a function of bias and subsequently used as the standard for one-port calibration. Comparisons of the error coefficients derived using the diode standard are shown to be in good agreement with those ...
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#1Robert M. Weikle (UVA: University of Virginia)H-Index: 23
#2Souheil NadriH-Index: 3
Last.Mona ZebarjadiH-Index: 21
view all 9 authors...
Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is...
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#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Christopher M. Moore (UVA: University of Virginia)H-Index: 8
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 11 authors...
This paper presents the first thermal characterization of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized using a thermoreflectance measurement technique. Heating and cooling temperature profiles and 2-D temperature maps are obtained for 5.5- \mu \text{m}diameter diodes. From the measurements, we extracted the device thermal resistances, anode temperatures, and thermal time constants. Equivalent circuit and finite-element models are developed...
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#1Robert M. Weikle (UVA: University of Virginia)H-Index: 23
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Charles L. Brown (UVA: University of Virginia)H-Index: 5
view all 10 authors...
Source
Jun 1, 2018 in IMS (International Microwave Symposium)
#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 8 authors...
An integrated frequency quadrupler operating at 160 GHz, producing 100 mW of output power, and achieving peak efficiency of 25.5% is described. The quadrupler design is based on prior art and consists of GaAs Schottky diodes with epitaxy transferred to a micromachined silicon carrier forming a heterogene-ously-integrated chip. A newly-developed fabrication process that eliminates high temperature annealing and utilizes SU-8 for adhesive bonding was employed to realize the circuit. The new proces...
1 CitationsSource
May 1, 2018 in IMTC (Instrumentation and Measurement Technology Conference)
#1Linli Xie (UVA: University of Virginia)H-Index: 4
#2Christopher M. Moore (UVA: University of Virginia)H-Index: 8
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 9 authors...
The design and fabrication process for implementing a proof-of-concept on-wafer probe with integrated diode temperature sensor is reported. The sensor consists of a wafer probe fabricated from high-resistivity silicon using micromachining techniques. The temperature sensing element is a GaAs Schottky diode that is integrated with the probe through an epitaxy transfer process that utilizes SU-8 as a bonding agent. Design of the probe as well as fabrication and measurement of prototype diodes for ...
1 CitationsSource
May 1, 2018 in CLEO (Conference on Lasers and Electro-Optics)
#1Qianhuan Yu (UVA: University of Virginia)H-Index: 5
#2Ye Wang (UVA: University of Virginia)H-Index: 3
Last.Andreas Beling (UVA: University of Virginia)H-Index: 21
view all 9 authors...
We demonstrate back-illuminated III-V modified uni-traveling carrier photodiodes on silicon using SU-8 as the bonding layer. Responsivity at 1620nm, bandwidth, output RF power and OIP3 are 0.8A/W, 18GHz, 4dBm and 22.5dBm at 9GHz, respectively.
2 CitationsSource
#1Linli Xie (UVA: University of Virginia)H-Index: 4
#2Souheil Nadri (UVA: University of Virginia)H-Index: 3
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 8 authors...
This letter describes a new approach for fabricating quasi-vertical submillimeter-wave GaAs Schottky diodes heterogeneously integrated to high-resistivity silicon substrates. The new method is robust and eliminates previous processing steps that were prone to result in wafer fracture and delamination. Diodes fabricated with the new process and measured in the 325–500 GHz range using on-wafer RF probes exhibits low parasitic capacitance and series resistance, achieving device characteristics comp...
6 CitationsSource
Jun 1, 2017 in IMS (International Microwave Symposium)
#1Michael B. Eller (UVA: University of Virginia)H-Index: 1
#2Noah D. Sauber (UVA: University of Virginia)H-Index: 1
Last.Charles L. Brown (UVA: University of Virginia)H-Index: 5
view all 7 authors...
A prototype imaging reflectometer based on the coded aperture technique and operating in the WR-1.5 (500–750 GHz) frequency band is described. Masks for the coded aperture system are realized through optical modulation of the conductivity of a high-resistivity silicon wafer. A network model representation of the imaging system is developed and applied to measuring beam maps of a submillimeter-wave diagonal horn antenna.
1 CitationsSource
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