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Linli Xie
University of Virginia
23Publications
4H-index
46Citations
Publications 21
Newest
#1Qianhuan Yu (UVA: University of Virginia)H-Index: 5
#2Nan Ye (UVA: University of Virginia)
Last.Andreas Beling (UVA: University of Virginia)H-Index: 21
view all 10 authors...
We demonstrate InGaAs/InP photodiodes on Si3N4 waveguides with record-high external (internal) responsivities of 0.68 A/W (0.8 A/W) and 0.24 A/W (0.6 A/W) at 1550 nm and 1064 nm, respectively. Balanced photodiodes have a low dark current of 10 nA, 7 GHz bandwidth, and over 40 dB common mode rejection ratio.
#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 6 authors...
This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are quasi-vertical gallium arsenide Schottky diodes integrated on silicon. The technique utilizes measurements of coplanar waveguide-fed passive structures in the WR-2.2 band (325–500 GHz), which are fabricated on the same wafer as the diodes. These structures consist of short- and open-circuited terminations that allow direct measurement of the...
Source
Jun 1, 2019 in IMS (International Microwave Symposium)
#1Chunhu Zhang (UVA: University of Virginia)H-Index: 7
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 7 authors...
This paper demonstrates the first differential on-wafer probe with integrated balun operating in the WR-3.4 (220 – 330 GHz) waveguide band. The probe employs integrated balun circuitry to convert the single-ended signal from the waveguide output of a VNA into differential stimuli at the on-wafer transmission line output. The design approach, fabrication method, and measured results are described in this paper.
Source
#1Linli Xie (UVA: University of Virginia)H-Index: 4
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 8 authors...
An approach for one port on-wafer electronic calibration at submillimeter wavelengths is described. Quasivertical GaAs Schottky diodes integrated onto silicon serve as the electronic calibration standard. The S-parameters of the diode standards are characterized over the WM-570 (325—500 GHz) band as a function of bias and subsequently used as the standard for one-port calibration. Comparisons of the error coefficients derived using the diode standard are shown to be in good agreement with those ...
Source
#1Robert M. Weikle (UVA: University of Virginia)H-Index: 23
#2Souheil NadriH-Index: 3
Last.Mona ZebarjadiH-Index: 21
view all 9 authors...
Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is...
Source
#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Christopher M. Moore (UVA: University of Virginia)H-Index: 8
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 11 authors...
This paper presents the first thermal characterization of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized using a thermoreflectance measurement technique. Heating and cooling temperature profiles and 2-D temperature maps are obtained for 5.5- \mu \text{m}diameter diodes. From the measurements, we extracted the device thermal resistances, anode temperatures, and thermal time constants. Equivalent circuit and finite-element models are developed...
Source
#1Robert M. Weikle (UVA: University of Virginia)H-Index: 23
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Charles L. Brown (UVA: University of Virginia)H-Index: 5
view all 10 authors...
Source
#1Yukang Feng (UVA: University of Virginia)H-Index: 2
#2Matthew T. Dejarld (NRL: United States Naval Research Laboratory)H-Index: 1
Last.N. Scott Barker (UVA: University of Virginia)H-Index: 11
view all 8 authors...
In this paper, millimeter-wave detection is conducted for the first time on the basis of graphene photo- thermoelectric effect. Upon receiving millimeter- wave radiation, graphene generates hot carriers which diffuse towards the nearby drain and source contact metals, and causing a differential drain -source voltage. To optimize detection performance, devices with different drain and source contact metals as well as graphene geometries are designed and tested. Measured results show that using Yb...
Source
Jun 1, 2018 in IMS (International Microwave Symposium)
#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
view all 8 authors...
An integrated frequency quadrupler operating at 160 GHz, producing 100 mW of output power, and achieving peak efficiency of 25.5% is described. The quadrupler design is based on prior art and consists of GaAs Schottky diodes with epitaxy transferred to a micromachined silicon carrier forming a heterogene-ously-integrated chip. A newly-developed fabrication process that eliminates high temperature annealing and utilizes SU-8 for adhesive bonding was employed to realize the circuit. The new proces...
1 CitationsSource
#1Andrew J. Mercante (UD: University of Delaware)H-Index: 3
#2Shouyuan Shi (UD: University of Delaware)H-Index: 27
Last.Dennis W. Prather (UD: University of Delaware)H-Index: 35
view all 6 authors...
We present a thin film crystal ion sliced (CIS) LiNbO3 phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device’s broadband response, which is estimated to extend even beyon...
17 CitationsSource
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