Original paper
HgCdTe/CdZnTe LPE epitaxial layers: From material growth to applications in devices
Abstract
Some properties of liquid phase epitaxy growth of Hg1-xCdxTe/Cd1-yZnyTe epiwafers (x ≈ 0.21; 0.3 and y ≈ 0.04 by mole fraction) applicable for mid- and long wavelength infrared (IR) photodiodes and focal plane arrays (FPA) are described. The design and technology of infrared photodetectors manufacturing, both single and multielements arrays with different sizes of sensitive elements, have been developed. Experimentally determined are the...
Paper Details
Title
HgCdTe/CdZnTe LPE epitaxial layers: From material growth to applications in devices
Published Date
Jan 1, 2020
Journal
Volume
529
Pages
125295 - 125295
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Notes
History