HgCdTe/CdZnTe LPE epitaxial layers: From material growth to applications in devices

Some properties of liquid phase epitaxy growth of Hg1-xCdxTe/Cd1-yZnyTe epiwafers (x ≈ 0.21; 0.3 and y ≈ 0.04 by mole fraction) applicable for mid- and long wavelength infrared (IR) photodiodes and focal plane arrays (FPA) are described. The design and technology of infrared photodetectors manufacturing, both single and multielements arrays with different sizes of sensitive elements, have been developed. Experimentally determined are the...