Journal of Crystal Growth
Papers 38145
1 page of 3,815 pages (38.1k results)
Abstract Herein, beads based on chitosan and amidoximated starch were used, for the first time, as support materials for CaCO3 crystallization. The CaCO3 crystal growth was conducted by using different carbonate sources (Na2CO3, dimethyl- and diethyl-carbonates) and different strategies (fast, alternate or slow diffusion). The interaction of the obtained composite beads with Cu(II) ions was also investigated. The morphology of composite beads, before and after interaction with Cu(II) ions, was f...
#1O.P. Kulyk (University of Kharkiv)
#2V.I. Tkachenko (University of Kharkiv)
Last.Toru Aoki (Shizuoka University)H-Index: 23
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Abstract The profile dynamics of a macroscopic curved vicinal surface of a crystal, during its growth from the vapor phase, has been investigated. The averaging method on large intervals of spatial coordinate change, which nevertheless remained infinitely small, was used. The expressions for average values of adatom concentration and velocity of elementary steps were obtained. With a phenomenological account of the boundary curvature, the nonlinear Korteweg-de Vries-Burgers equation describing t...
Abstract Some properties of liquid phase epitaxy growth of Hg1-xCdxTe/Cd1-yZnyTe epiwafers (x≈0.21; 0.3 and y≈0.04 by mole fraction) applicable for mid- and long wavelength infrared (IR) photodiodes and focal plane arrays (FPA) are described. The design and technology of infrared photodetectors manufacturing, both single and multielements arrays with different sizes of sensitive elements, have been developed. Experimentally determined are the low-temperature regimes (T ≤ 100 °C) of CdTe passivat...
#1D.I. RogiloH-Index: 2
#2L.I. Fedina (NSU: Novosibirsk State University)H-Index: 4
Last.A. V. Latyshev (NSU: Novosibirsk State University)H-Index: 18
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Abstract Using in situ ultrahigh vacuum reflection electron microscopy, we have first visualized the evolution of step-bunched Si(1 1 1) surface during Se beam etching depending on substrate temperature T and terrace size required for survival of etching-induced vacancies. Below T ~ 630 °C, the etching proceeds in layer-by-layer mode via periodic nucleation of small 2D vacancy islands without noticeable motion of steps. However, in 630–830 °C interval, the etching of the 7 × 7 reconstructed Si(1...
#1Zbigniew Galazka (Institut für Kristallzüchtung)H-Index: 21
#2Klaus Irmscher (Institut für Kristallzüchtung)H-Index: 20
Last.Matthias Bickermann (Institut für Kristallzüchtung)H-Index: 25
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Abstract The present report relates to a systematic study of dopant incorporation into bulk β-Ga2O3 single crystals grown by the Czochralski method, and their impact on growth stability, crystal appearance (growth habit), electrical properties, and transmittance of the obtained crystals. At very similar growth conditions, the dopant incorporation is driven mainly by ionic radii difference between dopant and Ga3+ ion and by thermal stability of the dopant during crystal growth. Good growth stabil...
1 CitationsSource
#1Caiping Wan (CAS: Chinese Academy of Sciences)H-Index: 1
#2Hengyu Xu (CAS: Chinese Academy of Sciences)H-Index: 1
Last.Jin-Ping AoH-Index: 13
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Abstract The paper confirmed the SiC/SiO2 interface state density obtained from the ultrahigh-temperature dry oxidation process on 4H-SiC Si-face (0001) at up to 1550°C without any other passivating techniques. Our results were consistent with those of previous reports. Furthermore, we also considered the reliability of SiO2, which is important for its practical application, by time-dependent dielectric breakdown measurements (TDDB). The optimal interface state density was obtained for the gate ...
#1Andrew M. Mullis (University of Leeds)H-Index: 21
#2Nafisul Haque (University of Leeds)H-Index: 3
Abstract The congruently melting, single phase intermetallic β-Ni3Ge has been subject to rapid solidification via drop-tube processing. We establish that the rapidly solidified material growing during the recalescence phase of solidification can be distinguished from the post-recalescence material in the as-solidified sample by the degree of chemical ordering displayed. This can in turn be used to visualize the material from the recalescence phase of solidification. At intermediate cooling rates...
#1Merton C. Flemings (MIT: Massachusetts Institute of Technology)H-Index: 37
Abstract A number of circumstances combined in the years following the Second World War to bring about much increased interest in solidification from both engineering and science perspectives. These included the advent of new casting processes such as continuous casting, superalloy casting for engine parts, silicon crystal growing for the electronics, and new basic understandings including the advent of constitutional supercooling. This paper recalls developments in solidification processing dur...
#1Kui Cheng (SDU: Shandong University)H-Index: 1
#2Guodong Zhang (SDU: Shandong University)H-Index: 7
Last.Xutang Tao (SDU: Shandong University)H-Index: 43
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Abstract The synthesis of large amount of high-purity CdSiP2 (CSP) polycrystalline material is a key issue for the single crystal growth. In this paper, the transportation and reaction properties of Cd, Si, and P in the two-temperature synthesis of CSP polycrystalline materials was investigated. The major reaction intermediates and the transport phenomena in two-temperature synthesis of CSP were studied by interrupting the synthesis process using quenching technique. The powder X-ray diffraction...
#1Samia BouarabH-Index: 1
#2F. MokhtariH-Index: 4
Last.Abdessamed Medelfef (ECL: École centrale de Lyon)H-Index: 1
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Abstract Silicon purification for photovoltaic applications is a crucial challenge to improve the energy production performance of solar panels. In the present work, we focus on the metallurgical grade silicon purification process through a directional solidification technique, namely the horizontal Bridgman technique. By means of numerical simulations, it is shown that high frequency vibrations applied to the crucible can be used to enhance the convective level in the molten silicon (thermal-vi...
Top fields of study
Inorganic chemistry