Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements

Volume: 2019, Issue: DPC, Pages: 001293 - 001310
Published: Jan 1, 2019
Abstract
Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is particularly important for frequency multipliers, as these circuits generally exhibit low-to-modest conversion efficiencies, and are usually driven with high-power sources to achieve usable output power in the submillimeter-wave region of the...
Paper Details
Title
Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements
Published Date
Jan 1, 2019
Volume
2019
Issue
DPC
Pages
001293 - 001310
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