Fabrication and Analysis of Vertical Thin Poly-Si Channel Transfer Gate Pixels for a 3-D CMOS Image Sensor

This paper reports the process integration and fabrication characteristics of a vertical thin poly-Si channel (VTPC) transfer gate (TG) pixel, which is one of the candidates for future 3-D CMOS image sensor (CIS) applications. The proposed process integration can effectively suppress grain boundary formation at the interface between the photodiode and the poly-Si channel by solid phase epitaxial growth (SPEG) mechanism. Furthermore, dopant...