Impact of Processing on Photoluminescence Properties of 4H-SiC for Potential Qubit Applications

Single silicon vacancies V Si in silicon carbide nanostructures hold great promise for future technological applications in scalable quantum computing and information processing for simulation, sensing, and communication. These defects are typically created by ion implantation or neutron/electron irradiation. Identification of these defects, knowledge of their characteristics, control of their concentrations, isolation of single spin defects and...