Growth of a-axial GaN core nanowires, semi-polar (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:mn>1</mml:mn><mml:mrow><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>‾</mml:mo></mml:mover></mml:mrow><mml:mn>01</mml:mn></mml:mrow></mml:math>) GaN/InGaN multiple quantum well co-axial nanowires on Si substrate, and their carrier dynamics

The quantum-confined Stark effect (QCSE) reduces the quantum efficiency of optical devices due to the reduced overlap of electron and hole wave functions because of the growth of GaN/InGaN multiple quantum wells (MQWs) on the polar facet. Here, we report the growth of non-polar [112‾0] GaN core nanowires on Si substrate by MOCVD. Subsequently, the active region of GaN/InGaN MQWs is grown on (11‾01) semipolar growth facet. The morphology of GaN...