Growth of a-axial GaN core nanowires, semi-polar (11‾01) GaN/InGaN multiple quantum well co-axial nanowires on Si substrate, and their carrier dynamics

The quantum-confined Stark effect (QCSE) reduces the quantum efficiency of optical devices due to the reduced overlap of electron and hole wave functions because of the growth of GaN/InGaN multiple quantum wells (MQWs) on the polar facet. Here, we report the growth of non-polar [112‾0] GaN core nanowires on Si substrate by MOCVD. Subsequently, the active region of GaN/InGaN MQWs is grown on (11‾01) semipolar growth facet. The morphology of GaN...