Accumulation-Mode Device: New Power MOSFET Breaking Superjunction Silicon Limit by Simulation Study

In this article, new structures are proposed with an extra electrode for accumulation-mode vertical double-diffused metal-oxide semiconductor (VDMOS) (EA VDMOS) and a gate electrode for accumulation-mode VDMOS (GA VDMOS). For accumulation-mode VDMOS, the drift region is lightly doped to support drain voltage in the OFF-state. A large density of electrons is accumulated to modulate the conductivity of the drift region in the ON-state. It is...