Original paper
Accumulation-Mode Device: New Power MOSFET Breaking Superjunction Silicon Limit by Simulation Study
Volume: 67, Issue: 3, Pages: 1085 - 1089
Published: Mar 1, 2020
Abstract
In this article, new structures are proposed with an extra electrode for accumulation-mode vertical double-diffused metal-oxide semiconductor (VDMOS) (EA VDMOS) and a gate electrode for accumulation-mode VDMOS (GA VDMOS). For accumulation-mode VDMOS, the drift region is lightly doped to support drain voltage in the OFF-state. A large density of electrons is accumulated to modulate the conductivity of the drift region in the ON-state. It is...
Paper Details
Title
Accumulation-Mode Device: New Power MOSFET Breaking Superjunction Silicon Limit by Simulation Study
Published Date
Mar 1, 2020
Volume
67
Issue
3
Pages
1085 - 1089
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Notes
History