Reflectance Modification in Nanostructured Silicon Layers with Gradient Porosity

A significant change in effective reflectance spectra of nanostructured porous silicon layers grown with different times of metal-assisted chemical etching is detected. The low reflectances at the level of 5–10% measured in the spectral range of 200–400 nm are explained by strong elastic scattering of light in combination with absorption in silicon nanostructures, while a reflectance increase in the range of 500–1800 nm, which is visually...