Theory of 3-D Superjunction MOSFET

The state-of-the-art superjunction (SJ) MOSFETs are based on the p-n pillar structures, arranged in a 2-D stripe geometry. This arrangement uses the superposition of the electric field components at the p-n junctions to create an enhanced depletion volume for higher breakdown capability. In this article, we will discuss structures, which additionally use the component of the electric field in the third dimension, to further enhance the depletion...