Original paper
Modeling of the Impact of the Substrate Voltage on the Capacitances of GaN-on-Si HEMTs
Volume: 66, Issue: 12, Pages: 5103 - 5110
Published: Dec 1, 2019
Abstract
Measurement results of the terminal capacitances of a high-voltage power GaN high-electron-mobility transistor on a conductive-Si substrate are presented. These results show significant dependence of these capacitances on the substrate (or bulk/backside) voltage. In this article, we enhance the ASM-GaN compact model, which is a recently selected industry standard model for GaN devices, to account for this dependence. A detailed description of...
Paper Details
Title
Modeling of the Impact of the Substrate Voltage on the Capacitances of GaN-on-Si HEMTs
Published Date
Dec 1, 2019
Volume
66
Issue
12
Pages
5103 - 5110
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Notes
History