Growth of GaSb Crystal and Evaluation of Its Thermoelectric Properties Along (111) Plane

In this study, group III–V compound semiconductor gallium antimonide (GaSb) crystal is grown by the vertical Bridgman technique. A (111) twinning is generated in the as‐grown crystal due to its polarity behavior as the GaSb crystal has a zinc‐blende structure. Hall effect measurements illustrate that the as‐grown GaSb crystal has n‐type semiconductor behavior among the whole temperature range, and the carrier concentration reaches the highest...