Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions

The present report relates to a systematic study of dopant incorporation into bulk β-Ga2O3 single crystals grown by the Czochralski method, and their impact on growth stability, crystal appearance (growth habit), electrical properties, and transmittance of the obtained crystals. At very similar growth conditions, the dopant incorporation is driven mainly by ionic radii difference between dopant and Ga3+ ion and by thermal stability of the dopant...