On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers

A comprehensive photogenerated carrier assisted etching investigation is carried out on the Si polar surface of high-quality p- and n-type (0001) 4H–SiC epilayers. The epilayers have intentional or unintentional doping densities in the 1014–1018 cm−3 range. Cyclic voltammetry and chronoamperometry studies under a non-focused above bandgap (280–400 nm) light illumination (≤0.66 Wcm−2) in a highly basic etching medium (1 wt% KOH solution, pH ∼12)...