Numerical analysis of impact ionization in HOT HgCdTe avalanche photodiodes
Published: Jul 1, 2019
Abstract
Semiconductor avalanche photodiodes enable individual photons to be detected when the incident flux of light is very low. This is possible thanks to the use of the avalanche multiplication phenomenon. Consequently, the obtained gain of photocurrent is from a few to several million times.The avalanche multiplication effect in semiconductors is determined by the generation rate caused by impact ionization. This paper describes the results of...
Paper Details
Title
Numerical analysis of impact ionization in HOT HgCdTe avalanche photodiodes
Published Date
Jul 1, 2019
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