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Małgorzata Kopytko
Wrocław University of Technology
77Publications
12H-index
494Citations
Publications 76
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Abstract The development of the HgCdTe alloy as the most important intrinsic semiconductor for infrared (IR) technology is well established and recognized. In spite of the achievements in material and device quality, the drawbacks still exist due to bulk and surface instability, lower yields and higher costs particularly in fabrication of long wavelength infrared arrays. The difficulties with this material encouraged to research on other compounds to improve device performance. Since the first p...
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#1Małgorzata KopytkoH-Index: 12
#2Emilia GomółkaH-Index: 2
Last.Piotr MartyniukH-Index: 14
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The paper presents the numerical analysis of the performance of the nBn type-II superlattice barrier detector operated at 230 K. Results of theoretical predictions were compared to the experimental data for the nBn detector composed of AlAs0.15Sb0.85 barrier and InAs (5.096 nm)/InAs0.62Sb0.38 (1.94 nm) superlattice absorber and contact layer. Detector structure was grown on GaAs substrate using molecular beam epitaxy. To determine the position of the electron miniband and the first heavy hole st...
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#1Klaudia HackiewiczH-Index: 1
#2Małgorzata KopytkoH-Index: 12
Last.Łukasz CiuraH-Index: 4
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Electrical and optical properties of interband cascade infrared photodetectors with InAs/GaSb type-II superlattice absorbers are investigated in this work. We compare the detection parameters of detectors grown on the native GaSb substrate and lattice-mismatched GaAs substrate and seek solutions to enhance device performance, specifically with using an optical immersion. The detectors grown on GaAs have better detection parameters at room temperature, but at lower temperatures the misfit disloca...
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Abstract InAsSb ternary alloys can be considered as an alternative to HgCdTe for mid-wavelength, as well as long-wavelength infrared applications. Its energy bandgap exhibits nonlinearity versus Sb composition, and hence the correct determination of its value is necessary for the effective design and simulation of optoelectronic devices. The commonly used expression on the InAsSb energy bandgap provided by Wieder and Clawson overestimated energy bandgap values at high temperatures. In this paper...
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#1Małgorzata KopytkoH-Index: 12
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Semiconductor avalanche photodiodes enable individual photons to be detected when the incident flux of light is very low. This is possible thanks to the use of the avalanche multiplication phenomenon. Consequently, the obtained gain of photocurrent is from a few to several million times.The avalanche multiplication effect in semiconductors is determined by the generation rate caused by impact ionization. This paper describes the results of research aimed at investigation of the impact ionization...
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#1Antoni RogalskiH-Index: 38
#2Małgorzata KopytkoH-Index: 12
Last.Piotr MartyniukH-Index: 14
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Since the discovery of graphene, its applications to electronic and optoelectronic devices have been intensively and thoroughly researched. Extraordinary and unusual electronic and optical properties make graphene and other two-dimensional (2D) materials promising candidates for infrared and terahertz (THz) photodetectors. Until now, however, 2D material-based performance is lower in comparison with those of infrared and terahertz detectors existing in the global market. This paper gives an over...
1 CitationsSource
#1Piotr MartyniukH-Index: 14
#2Małgorzata KopytkoH-Index: 12
Last.Janusz MikołajczykH-Index: 13
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InAsSb ternary alloy is considered to be an alternative to HgCdTe (MCT) in long-wavelength infrared (LWIR) spectral region. The high operation temperature conditions are successfully reached with AIIIBV bariodes, where InAsSb/AlAsSb system is playing dominant role. Since theoretically there is no depletion region in the active layer, the generation-recombination and trap-assisted tunneling mechanisms are suppressed leading to lower dark currents in comparison with standard photodiodes. As a cons...
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In this paper we describe recent progress in the HgCdTe multilayer heterostructures grown by metaloorganic chemical vapour deposition on GaAs substrates for photodetectors operated above 200 K. We present example of design and characterization of the new classical N+–n–P+–p–N+ back to back HgCdTe dual-band photodiode structure, that operates within the mid-wavelength infrared band in sequential mode. A numerical modelling was used for investigation of the device design on the current responsivit...
1 CitationsSource
Abstract The growing demand for high operating temperature infrared detectors and the reduction in pixel size is one of the key drivers for material and technology improvements in recent years. It has been predicted that a long Shockley-Read-Hall lifetime in HgCdTe mandates the use of this material for room-temperature operation. A fully-depleted reverse-biased long wavelength infrared P-on-n HgCdTe heterojunction photodiode fulfils HOT requirements. In such conditions, Auger recombination is el...
1 CitationsSource
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