Free-standing and ultrathin inorganic light-emitting diode array

We report on the fabrication and characteristics of an individually addressable gallium nitride (GaN) microdisk light-emitting diode (LED) array in free-standing and ultrathin form. A high-quality GaN microdisk array with n -GaN, InGaN/GaN quantum wells and p -GaN layers was epitaxially grown on graphene microdots patterned on SiO 2 /Si substrates. Due to the weak attachment of the graphene microdots to the growth substrate, a microdisk array...