NbTiN/AlN/NbTiN SIS Junctions Realized by Reactive Bias Target Ion Beam Deposition

The current state-of-the-art approach for superconductor-insulator-superconductor (SIS) junction fabrication is based on magnetron sputtering and the Gurvitch Al overlayer trilayer process, where an Al overlayer is deposited onto the Nb base electrode in order to subsequently grow a critical ~1-nm AlO _x or AlN tunnel barrier. While the switch...