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Arthur W. Lichtenberger
University of Virginia
131Publications
16H-index
1,042Citations
Publications 131
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#1Michael E. Cyberey (UVA: University of Virginia)H-Index: 3
#2Tannaz Farrahi (UVA: University of Virginia)H-Index: 4
Last.Arthur W. Lichtenberger (UVA: University of Virginia)H-Index: 16
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The current state-of-the-art approach for superconductor–insulator–superconductor (SIS) junction fabric-ation is based on magnetron sputtering and the Gurvitch Al overlayer trilayer process, where an Al overlayer is deposited onto the Nb base electrode in order to subsequently grow a critical \sim1-nm AlO _{x}or AlN tunnel barrier. While the switch from AlO _xto AlN barriers has significantly increased the achievable critical current density, and significant research has been performed ...
1 CitationsSource
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#1Michael E. Cyberey (UVA: University of Virginia)H-Index: 3
#2Tannaz Farrahi (UVA: University of Virginia)H-Index: 4
Last.Arthur W. Lichtenberger (UVA: University of Virginia)H-Index: 16
view all 7 authors...
High energy gap Nb-based superconducting alloys with low normal state resistivity are fundamentally important for realization of low-loss high frequency circuits operating above the typical ∼670 GHz gap frequency of elemental Nb. NbTiN has been shown to have a superconducting energy gap nearly twice that of elemental Nb, and is emerging as an important material for various detector and superconducting computing technologies. In this paper, we report on the growth of high-quality face-centered cu...
1 CitationsSource
#1Tannaz Farrahi (UVA: University of Virginia)H-Index: 4
#2Michael E. Cyberey (UVA: University of Virginia)H-Index: 3
Last.Arthur W. Lichtenberger (UVA: University of Virginia)H-Index: 16
view all 4 authors...
Nb-based superconducting alloys, such as NbN and NbTiN, can have a superconducting energy gap near twice that of elemental Nb, thus, being ideal candidates for low-loss superconducting circuits operating above the gap frequency of Nb. We are particularly interested in these materials for THz-frequency superconducting-insulating-superconducting (SIS) mixers, kinetic inductance detectors, and traveling wave kinetic inductance parametric amplifier devices. We recently reported the use of an alterna...
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Jun 1, 2019 in IMS (International Microwave Symposium)
#1Chunhu Zhang (UVA: University of Virginia)H-Index: 7
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
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This paper demonstrates the first differential on-wafer probe with integrated balun operating in the WR-3.4 (220 – 330 GHz) waveguide band. The probe employs integrated balun circuitry to convert the single-ended signal from the waveguide output of a VNA into differential stimuli at the on-wafer transmission line output. The design approach, fabrication method, and measured results are described in this paper.
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#1Linli Xie (UVA: University of Virginia)H-Index: 4
#2Matthew F. BauwensH-Index: 7
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
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An approach for one port on-wafer electronic calibration at submillimeter wavelengths is described. Quasivertical GaAs Schottky diodes integrated onto silicon serve as the electronic calibration standard. The S-parameters of the diode standards are characterized over the WM-570 (325—500 GHz) band as a function of bias and subsequently used as the standard for one-port calibration. Comparisons of the error coefficients derived using the diode standard are shown to be in good agreement with those ...
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#1Robert M. Weikle (UVA: University of Virginia)H-Index: 23
#2Souheil NadriH-Index: 3
Last.Mona ZebarjadiH-Index: 21
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Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is...
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#1Souheil Nadri (UVA: University of Virginia)H-Index: 3
#2Christopher M. Moore (UVA: University of Virginia)H-Index: 8
Last.Robert M. Weikle (UVA: University of Virginia)H-Index: 23
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This paper presents the first thermal characterization of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized using a thermoreflectance measurement technique. Heating and cooling temperature profiles and 2-D temperature maps are obtained for 5.5- \mu \text{m}diameter diodes. From the measurements, we extracted the device thermal resistances, anode temperatures, and thermal time constants. Equivalent circuit and finite-element models are developed...
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#1Robert M. Weikle (UVA: University of Virginia)H-Index: 23
#2Linli Xie (UVA: University of Virginia)H-Index: 4
Last.Charles L. Brown (UVA: University of Virginia)H-Index: 5
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#1Omid NoroozianH-Index: 2
Last.Klaus M. PontoppidanH-Index: 44
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