Self-Heating in SOI MOSFETs at the 45nm Node

Published: Oct 1, 2018
Abstract
To understand the impact of self-heating in SOI CMOS technologies we have fabricated pairs of 40nm gate length n-channel MOSFETs that share a common source contact and the same active silicon region. One of the MOSFETs is turned on and heats the active silicon, while the other is biased into the subthreshold regime and operates as a local thermometer. Preliminary results show that the MOSFET thermometer temperature increases approximately...
Paper Details
Title
Self-Heating in SOI MOSFETs at the 45nm Node
Published Date
Oct 1, 2018
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