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Trevor Thornton
Arizona State University
196Publications
23H-index
3,230Citations
Publications 189
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#1Xiong Zhang (ASU: Arizona State University)H-Index: 2
#2Payam Mehr (ASU: Arizona State University)H-Index: 2
Last.Trevor Thornton (ASU: Arizona State University)H-Index: 23
view all 3 authors...
Closely spaced n-channel MOSFETs have been used to compare the self-heating in nominally identical devices fabricated on conventional and high resistivity, trap-rich silicon-on-insulator (SOI) substrates. One of the MOSFETs operates above threshold and in saturation to heat the active silicon, while the other is biased into the sub-threshold regime and operates as a local thermometer. The trap-rich layer in the high resistivity substrates consists of a highly defected, poly-Si layer just below t...
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#1Payam Mehr (ASU: Arizona State University)H-Index: 2
#2Soroush Moallemi (ASU: Arizona State University)H-Index: 2
Last.Trevor Thornton (ASU: Arizona State University)H-Index: 23
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Metal semiconductor field effect transistors (MESFETs) have been fabricated using a 45-nm silicon-on-insulator CMOS technology available from Global Foundries. MESFETs with gate lengths of 200 nm show good manufacturability with well-controlled run-to-run variations. The DC and RF performance of devices with different drain access lengths are compared to illustrate the design trades between high breakdown voltage and high frequency operation. Two applications of the MESFETs for RF integrated cir...
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#1Xiong Zhang (ASU: Arizona State University)H-Index: 2
#2Payam Mehr (ASU: Arizona State University)H-Index: 2
Last.Trevor Thornton (ASU: Arizona State University)H-Index: 23
view all 4 authors...
To understand the impact of self-heating in SOI CMOS technologies we have fabricated pairs of 40nm gate length n-channel MOSFETs that share a common source contact and the same active silicon region. One of the MOSFETs is turned on and heats the active silicon, while the other is biased into the subthreshold regime and operates as a local thermometer. Preliminary results show that the MOSFET thermometer temperature increases approximately quadratically with the power dissipated in the MOSFET hea...
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#1Payam Mehr (ASU: Arizona State University)H-Index: 2
#2William Lepkowski (ASU: Arizona State University)H-Index: 7
Last.Trevor Thornton (ASU: Arizona State University)H-Index: 23
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Cascode amplifiers consisting of a common-source MOSFET integrated with a common-gate metal–semiconductor field-effect transistor (MESFET) have been manufactured using a commercial 45-nm silicon-on-insulator RF CMOS process. The enhanced breakdown voltage of the MESFETs combined with the high speed of the RF MOSFETs, results in a maximum cutoff frequency of up to 70 GHz, with a maximum available gain of 18 dB at K-band frequencies (18–27 GHz) using a 6-V supply. This high-frequency operation mak...
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#1Farib Khondoker (ASU: Arizona State University)H-Index: 1
#2Trevor Thornton (ASU: Arizona State University)H-Index: 23
Last.Uday Shankar Shanthamallu (ASU: Arizona State University)H-Index: 2
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Internet of Things (IoT) has enabled several applications related to data analytics. In this paper, an intuitive method for optimizing activity detection data is presented. Further applications include exploring detection accuracies of physical activities such as walking intensity and movement on stairs. This method utilizes different Microcontroller Units (MCUs) with embedded sensors which are used for activity detection. Additionally, this method also incorporates supervised learning - more sp...
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#1Andreas SpaniasH-Index: 28
Last.Sule OzevH-Index: 21
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#1Andreas SpaniasH-Index: 28
Last.Sule OzevH-Index: 21
view all 11 authors...
#1Payam Mehr (ASU: Arizona State University)H-Index: 2
#2Xiong Zhang (ASU: Arizona State University)H-Index: 2
Last.Trevor ThorntonH-Index: 23
view all 5 authors...
Abstract The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximate...
2 CitationsSource
#1Payam Mehr (ASU: Arizona State University)H-Index: 2
#2William Lepkowski (ASU: Arizona State University)H-Index: 7
Last.Trevor Thornton (ASU: Arizona State University)H-Index: 23
view all 6 authors...
Integrated n-channel MOSFET-MESFET cascode amplifiers have been fabricated using Global Foundries commercial 45nm SOI CMOS process. The cascode architecture combines the enhanced voltage operation of the MESFET (metal-semiconductor field-effect-transistor) with the high frequency capability of the scaled MOSFET. The resulting small-signal amplifiers demonstrate ƒ T = 50GHz when operated with supply voltages of 6V, significantly higher than the nominal 1V breakdown voltage of the CMOS transistors...
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