Investigation of surface leakage current in MWIR HgCdTe and InAsSb barrier detectors

In this paper we have investigated dark current sources in high-operating temperature HgCdTe and InAsSb and barrier infrared detectors fabricated using metal organic chemical vapour deposition and molecular beam epitaxy, respectively. The bulk leakage and surface leakage components of the dark current were determined for unpassivated devices fabricated in a round mesa geometry and in different sizes, from 100 to 500 μm diameters. Results show...