Original paper
Length separation of single-walled carbon nanotubes and its impact on structural and electrical properties of wafer-level fabricated carbon nanotube–field-effect transistors
Abstract
For an industrial realization of devices based on single-walled carbon nanotube (SWCNTs) such as field-effect transistors (FETs) it becomes increasingly important to consider technological aspects such as intrinsic device structure, integration process controllability as well as yield. From the perspective of a wafer-level integration technology, the influence of SWCNT length on the performance of short-channel CNT-FETs is demonstrated by means...
Paper Details
Title
Length separation of single-walled carbon nanotubes and its impact on structural and electrical properties of wafer-level fabricated carbon nanotube–field-effect transistors
Published Date
Sep 23, 2016
Journal
Volume
27
Issue
43
Pages
435203 - 435203
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Notes
History