Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements
Abstract
The hot carrier (HC)-induced traps in nanoscale fully depleted ultrathin body and buried oxide nMOSFETs are investigated by low-frequency noise (LFN) measurements in the frequency and time domains. The measured noise spectra are composed of 1/f and Lorentzian-type components. The Lorentzian noise is due to either generation-recombination noise or random telegraph noise (RTN). Based on the LFN results, the effect of the HC stress on fully...
Paper Details
Title
Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements
Published Date
Jan 1, 2016
Pages
1 - 7
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