The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge₂Sb₂Te₅

Recent interest in phase change materials (PCMs) for non-volatile memory applications has been fueled by the promise of scalability beyond the limit of conventional DRAM and NAND flash memory [1]. However, for such solid state device applications, Ge2Sb2Te5 (GST), GeSb, and other chalcogenide PCMs require doping. Doping favorably modifies crystallization speed, crystallization temperature, and thermal stability but the chemical role of the...