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Original paper

Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs

Volume: 49, Pages: 372 - 376
Published: Aug 16, 2005
Abstract
Voltage, polarity and thickness dependencies of time-to breakdown in n-FETs and p-FETs are investigated under inversion and accumulation conditions. The voltage dependence of all the cases is clearly described by a power-law. The voltage acceleration exponents (n) of the power-law of 45 (n-FETs inv.), 40 (n-FETs acc.) and 44 (p-FETs acc.) are independent of thickness. On the other hand, in p-FETs under inversion mode, the exponents (n) are /spl...
Paper Details
Title
Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs
Published Date
Aug 16, 2005
Volume
49
Pages
372 - 376
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