Rapid SiO₂ Atomic Layer Deposition Using Tris(tert-pentoxy)silanol

Rapid SiO2 atomic layer deposition (ALD) can deposit very thick and conformal SiO2 films by silanol exposure to surfaces covered with Al catalysts. In this study, we have explored the growth of rapid SiO2 ALD films using liquid tris(tert-pentoxy)silanol (TPS). The SiO2 film thicknesses were determined using quartz crystal microbalance and X-ray reflectivity measurements. The SiO2 film thicknesses deposited during one silanol exposure were...