Interfacial transport in crystal growth, a parametric comparison of convective effects

Volume: 65, Issue: 1-3, Pages: 91 - 104
Published: Dec 1, 1983
Abstract
Most solid-state devices utilize properties of crystals obtained through the controlled introduction into the host lattice of impurities (ȁdopantsȁ) or deviations from stoichiometry. This compositional adjustment is typically made during the growth of the solid from its nutrient (melt, vapor or solution). Since the yield and performance of devices depends strongly on their compositional uniformity, a detailed understanding of the fluid dynamics...
Paper Details
Title
Interfacial transport in crystal growth, a parametric comparison of convective effects
Published Date
Dec 1, 1983
Volume
65
Issue
1-3
Pages
91 - 104
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