Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented si substrate toward UV-detector applications

Volume: 278, Issue: 1, Pages: 288 - 292
Published: May 1, 2005
Abstract
Single-phase wurtzite Zn1−xMgxO alloy films with 0⩽x⩽0.45 were successfully grown on (1 1 1)-oriented Si substrates by molecular beam epitaxy. Although the Zn1−xMgx  O alloy films with x>0.3x>0.3 exceeded the solid solubility limit at 600 °C, the growth at lower temperatures was found to be effective to raise the limit up to x=0.45x=0.45. Both energies of the cathodoluminescence peak and optical absorption edge showed continuous blueshifts with...
Paper Details
Title
Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented si substrate toward UV-detector applications
Published Date
May 1, 2005
Volume
278
Issue
1
Pages
288 - 292
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