Vapor growth of diamond on diamond and other surfaces

It is shown that diamond crystallization by chemical vapor deposition should preferably be carried out at reduced pressures. Selective growth of diamond is ensured by introducing atomic hydrogen into the crystallization zone; this suppresses crystallization of graphite. The growth rate of homoepitaxial diamond films reached 1 μm/h at 1000°C; film properties were identical to those of bulk crystals. The lattice parameter in boron-doped films...