Double gate MOSFET based efficient wide band tunable power amplifiers

Performance, tunability and efficiency of double gate MOSFET (DG-MOSFET) based power amplifiers (PA) are investigated. Specifically, we propose two different wide-band PA topologies with 45 nm long DG-MOSFET and study their performance via computer simulations. The first one involves a modified Darlington cascode configuration with a peak gain of ~26 dB for a 3-dB bandwidth ≥ 30 GHz. The gain flatness is less than 20% in this range. The second...