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Savas Kaya
Ohio University
135Publications
17H-index
1,748Citations
Publications 135
Newest
Published on Jan 1, 2019in IEEE Transactions on Electron Devices 2.62
Talha Furkan Canan (Ohio University), Savas Kaya17
Estimated H-index: 17
(Ohio University)
+ 2 AuthorsAhmed Louri19
Estimated H-index: 19
(George Washington University)
Ultracompact sub-10-nm logic gates based on ambipolar characteristics of Schottky-barrier (SB) FinFETs and gate workfunction engineering (WFE) approach are introduced. Novel logic gate designs are proposed using WFE, whereby adjustment of workfunction in the contacts as well as two independently biased FinFET gates leads to an unprecedented degree of freedom for logic functionality that has not been explored before. The use of SB contacts, along with the high-k gate dielectric and ultrathin body...
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Published on Jan 16, 2019
Daniel J. Carbaugh3
Estimated H-index: 3
,
Savas Kaya17
Estimated H-index: 17
,
Faiz Rahman9
Estimated H-index: 9
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Published on Jul 31, 2018
Avinash Karanth1
Estimated H-index: 1
(Ohio University),
Savas Kaya17
Estimated H-index: 17
(Ohio University)
+ 6 AuthorsDominic DiTomaso7
Estimated H-index: 7
(Ohio University)
With the scaling of technology, the computing industry is experiencing a shift from multi-core to many-core architectures. However, traditional metallic-based on-chip interconnects may not scale to support many-core architectures due to high power dissipation, and increased communication latency. Attention has recently shifted to emerging technologies such as silicon-photonics and wireless interconnects to implement future on-chip communications. Although emerging technologies show promising res...
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Published on Dec 1, 2018
Talha Furkan Canan (Ohio University), Savas Kaya17
Estimated H-index: 17
(Ohio University)
+ 2 AuthorsAhmed Louri19
Estimated H-index: 19
(George Washington University)
We introduce novel ten (10T) and eight (8T) transistor full-adder logic gates based on recently proposed gate workfunction engineering (WFE) approach. When applied to sub-10 nm Schottky-barrier (SB) independent-gate FinFETs, WFE leads to hitherto unexplored 4T and 3T XOR implementations that operate with either only one or no inverted input, respectively. The novel 4T and 3T XOR gates eliminate the need for inverted inputs provided that ambipolar I-V characteristics is shifted by the associated ...
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Published on Aug 1, 2018
Yunus Kelestemur (Ohio University), Soumyasanta Laha5
Estimated H-index: 5
(Ohio University)
+ 3 AuthorsAhmed Louri19
Estimated H-index: 19
(George Washington University)
This paper investigates the properties of sub-THz compact tunable push-push oscillator in 45 nm FinFET technology. The push-push oscillator is designed to operate at 250 GHz in a modified cross-coupled LC topology. Commanding the FinFET gates separately in independent-mode bestows the push-push oscillator with a simple and efficient means for ~ 5 GHz tunable performance without external varactors. Moreover, due to the increased transconductance, the stability criteria of oscillation is much rela...
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Published on Oct 1, 2018
Soumyasanta Laha5
Estimated H-index: 5
(Ohio University),
Savas Kaya17
Estimated H-index: 17
(Ohio University)
+ 2 AuthorsVishawajeet Puri (Ohio University)
A working prototype of a wearable continuous noninvasive glucose monitoring system based on near infra-red (NIR) illumination at 940nm has been implemented and demonstrated with a phase-sensitive analog detector front-end and digital backend. The proposed design is capable of tracking the naturally weak NIR interactions in both transmissive (absorbance) and reflective (diffused reflectance) mode, depending on the optical head design. The front-end of the high-fidelity lock-in detection system is...
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Published on Mar 1, 2018in Journal of Materials in Civil Engineering 1.76
Lana AbuQtaish2
Estimated H-index: 2
,
Munir Nazzal16
Estimated H-index: 16
+ 3 AuthorsYazeed Abu Hassan
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Published on Jun 1, 2018in Construction and Building Materials 3.48
Munir Nazzal16
Estimated H-index: 16
(Ohio University),
Evan Holcombe (Ohio University)+ 2 AuthorsSavas Kaya17
Estimated H-index: 17
(Ohio University)
Abstract A comprehensive laboratory testing program was conducted to examine the blending between recycled asphalt shingles (RAS) and virgin asphalt binders and to evaluate the effect of RAS on resistance of asphalt mixes to fatigue and low-temperature cracking. To this end, atomic force microscopy (AFM) was utilized to study the blending between the RAS and the virgin asphalt binders. Manufacturing waste RAS and tear-off RAS were used in this paper. A new sample-preparation procedure was develo...
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Published on Jan 1, 2018
Munir Nazzal16
Estimated H-index: 16
,
Evan Holcombe + 2 AuthorsSavas Kaya17
Estimated H-index: 17
Published on Sep 1, 2018in Journal of Materials in Civil Engineering 1.76
Lana Abu Qtaish3
Estimated H-index: 3
(Ohio University),
Munir Nazzal16
Estimated H-index: 16
(Ohio University)
+ 4 AuthorsSang-Soo Kim8
Estimated H-index: 8
(Ohio University)
1 Citations Source Cite
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