Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing

Volume: 9, Issue: 7, Pages: 1068 - 1068
Published: Jun 30, 2020
Abstract
The effects of post-deposition annealing (PDA) on the formation of polarization-charge inversion at ultrathin Al2O3/Ga-polar GaN interfaces are assessed by the analysis of energy band bending and measurement of electrical conduction. The PDA-induced positive interface charges form downward energy band bending at the Al2O3/GaN interfaces with polarization-charge inversion, which is analyzed using X-ray photoelectron spectroscopy. Net charge and...
Paper Details
Title
Polarization-Charge Inversion at Al2O3/GaN Interfaces through Post-Deposition Annealing
Published Date
Jun 30, 2020
Volume
9
Issue
7
Pages
1068 - 1068
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