Ultra-broadband near-infrared emission CuInS2/ZnS quantum dots with high power efficiency and stability for the theranostic applications of mini light-emitting diodes
Abstract
Broadband near-infrared CuInS2/ZnS quantum with up to 94.8% quantum yield was synthesized with fast precursor decomposition. The better power efficiency and stability of CuInS2/ZnS mini-LED were performed with penetration tests and vein...
Paper Details
Title
Ultra-broadband near-infrared emission CuInS2/ZnS quantum dots with high power efficiency and stability for the theranostic applications of mini light-emitting diodes
Published Date
Jan 1, 2020
Journal
Volume
56
Issue
59
Pages
8285 - 8288
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