(Invited) Size Controlled Silicon Quantum Dots: Basic Properties and Electronic Applications
Abstract
The fabrication of SiO x /SiO 2 superlattices combined with thermal annealing enables the size and density control of Si quantum dots. The layered-arranged Si quantum dots represent a model system to systematically study the photonic and electronic properties of indirect gap quantum dots prepared in a CMOS compatible way. Hence, the model system is used to understand the interplay of absorption and recombination, the carrier kinetics and the...
Paper Details
Title
(Invited) Size Controlled Silicon Quantum Dots: Basic Properties and Electronic Applications
Published Date
May 1, 2020
Journal
Volume
MA2020-01
Issue
16
Pages
1056 - 1056
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