Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model
Abstract
This paper investigates the local variability in nanoscale triple-gate junctionless FinFETs utilizing an analytical symmetric and continuous compact model combined with Monte Carlo simulations. Initially, the device parameters are extracted from the experimental transfer characteristics, such as threshold voltage, ideality factor, low-field mobility, source-drain series resistance, channel length modulation factor and mobility degradation...
Paper Details
Title
Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model
Published Date
Aug 1, 2020
Journal
Volume
170
Pages
107835 - 107835
Citation AnalysisPro
You’ll need to upgrade your plan to Pro
Looking to understand the true influence of a researcher’s work across journals & affiliations?
- Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
- Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.
Notes
History