Mm‐wave single‐pole single‐throw m‐HEMT switch with low loss and high linearity

This Letter presents a single-pole single-throw (SPST) switch for high-power applications in the mm-wave frequency band. A stacked-FET structure is adopted in the shunt switching cell for reducing the insertion loss and improving the linearity of the switch. To enhance the isolation, the parasitic inductance of the stacked-FET structure is resonated out by connecting a series capacitor. The number of stacked FETs in each shunt cell and the...