Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology

Volume: 66, Issue: 2, Pages: 100485 - 100485
Published: May 1, 2020
Abstract
The fabrication and investigation of single and multilayered structures have become an essential issue in the past decades since these structures directly define valuable properties and efficiency of widely used terahertz (THz) emitters and detectors. Since the development of molecular-beam epitaxy, as well as other crystal growth techniques, a variety of structural designs has appeared and has been proposed. Since that, an enormous progress has...
Paper Details
Title
Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology
Published Date
May 1, 2020
Volume
66
Issue
2
Pages
100485 - 100485
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