WR-1.5 High-Power Frequency Doubler in 130-nm InP HBT Technology

Volume: 30, Issue: 5, Pages: 504 - 507
Published: Mar 24, 2020
Abstract
This letter presents a WR-1.5 frequency doubler implemented in a 130-nm InP heterojunction-bipolar-transistor (HBT) technology. The doubler core uses a differential common-emitter transistor to improve the stability and to ease the fundamental suppression. The output power is maximized by the source-pull and load-pull simulation. The input and output matching to the optimum impedance is implemented using a single transmission line. This simple...
Paper Details
Title
WR-1.5 High-Power Frequency Doubler in 130-nm InP HBT Technology
Published Date
Mar 24, 2020
Volume
30
Issue
5
Pages
504 - 507
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