A 126 μW Readout Circuit in 65 nm CMOS With Successive Approximation-Based Thresholding for Domain Wall Magnet-Based Random Number Generator

Volume: 20, Issue: 14, Pages: 7810 - 7818
Published: Jul 15, 2020
Abstract
We present a novel readout circuit for a ferromagnetic Hall cross-bar based random number generator. The random orientation of magnetic domains are result of anomalous Hall-effect. These ferromagnetic Hall cross-bar structures can be integrated with the read out circuit to form a plug and play random number generator. The system can resolve up to 15-20 μV Hall-voltages from Hall probe. Application of current densities around 10
Paper Details
Title
A 126 μW Readout Circuit in 65 nm CMOS With Successive Approximation-Based Thresholding for Domain Wall Magnet-Based Random Number Generator
Published Date
Jul 15, 2020
Volume
20
Issue
14
Pages
7810 - 7818
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