INFLUENCE OF SILICON WAFER CRYSTALLOGRAPHIC ORIENTATION ON ANODIZATION MECHANISM

The influence of silicon wafer crystallographic orientation on the formation of porous silicon during anodization in an HF solution is studied. Cross-section SEM image comparison of samples with different crystallographic orientations has shown that (111) Si samples exhibit a more branching, tree-like pore structure with a higher porosity value compared to (100) Si samples. This phenomenon is explained by pointing out differences in crystal...