CRAM: Collocated SRAM and DRAM With In-Memory Computing-Based Denoising and Filling for Neuromorphic Vision Sensors in 65 nm CMOS

Volume: 67, Issue: 5, Pages: 816 - 820
Published: May 1, 2020
Abstract
This brief presents an energy-efficient collocated random access memory (CRAM) featuring charge based computing. A 9T bit-cell-based collocated DRAM and SRAM together with a 2-dimensional charge diffusion paths topology is used to store the input binary image data and compute locally. The computing network performs both denoising approximating a nearest-neighbor median filter for background noise and region filling for the fragmented objects....
Paper Details
Title
CRAM: Collocated SRAM and DRAM With In-Memory Computing-Based Denoising and Filling for Neuromorphic Vision Sensors in 65 nm CMOS
Published Date
May 1, 2020
Volume
67
Issue
5
Pages
816 - 820
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