Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces
Volume: 21, Issue: 1, Pages: 195 - 204
Published: Jan 31, 2020
Abstract
For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe3O4 nanocrystals on Ge nuclei had a well-controlled interface (Fe3O4/GeOx/Ge) composed of high-crystallinity Fe3O4 and high-quality GeOx layers. The nanocrystals showed uniform...
Paper Details
Title
Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces
Published Date
Jan 31, 2020
Volume
21
Issue
1
Pages
195 - 204
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