Match!

One-dimensional hexagonal boron nitride conducting channel.

Published on Mar 6, 2020in Science Advances11.5
· DOI :10.1126/SCIADV.AAY4958
Hyo Ju Park10
Estimated H-index: 10
(UNIST: Ulsan National Institute of Science and Technology),
Janghwan Cha4
Estimated H-index: 4
(Sejong University)
+ 6 AuthorsZonghoon Lee34
Estimated H-index: 34
(UNIST: Ulsan National Institute of Science and Technology)
Abstract
Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA′/AB stacking boundaries in chemical vapor deposition–synthesized few-layer hBN. We find that the twin boundary is composed of a 6′6′ configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA′/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA′/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices.
  • References (39)
  • Citations (0)
📖 Papers frequently viewed together
8 Citations
1 Citations
2 Citations
78% of Scinapse members use related papers. After signing in, all features are FREE.
References39
Newest
#1Sara BarjaH-Index: 14
Last. Alexander Weber-BargioniH-Index: 28
view all 16 authors...
A scanning tunnelling microscopy study demonstrates that one-dimensional charge density waves can form at twin boundaries in a monolayer transition metal dichalcogenide.
67 CitationsSource
#1Roland Yingjie TayH-Index: 15
#2Hongling LiH-Index: 11
Last. Edwin Hang Tong TeoH-Index: 22
view all 8 authors...
Due to their exceptional chemical and thermal stabilities as well as electrically insulating property, atomically thin hexagonal boron nitride (h-BN) films have been identified as a promising class of dielectric substrate and encapsulation material for high-performance two-dimensional (2D) heterostructure devices. Herein, we report a facile chemical vapor deposition synthesis of large-area atomically thin h-BN including monolayer single crystals and C-doped h-BN (h-BCN) films utilizing a relativ...
28 CitationsSource
#1Qiucheng LiH-Index: 14
#2Xiaolong ZouH-Index: 28
Last. Zhongfan LiuH-Index: 84
view all 10 authors...
Grain boundaries (GBs) of hexagonal boron nitride (h-BN) grown on Cu(111) were investigated by scanning tunneling microscopy/spectroscopy (STM/STS). The first experimental evidence of the GBs composed of square-octagon pairs (4|8 GBs) was given, together with those containing pentagon-heptagon pairs (5|7 GBs). Two types of GBs were found to exhibit significantly different electronic properties, where the band gap of the 5|7 GB was dramatically decreased as compared with that of the 4|8 GB, consi...
50 CitationsSource
We present a theoretical study on the electron transmission through the AB-BA stacking boundary in multilayer graphene. Using the tight-binding model and the transfer matrix method, we calculate the electron transmission probability through the boundary as a function of electron Fermi energy in multilayers from bilayer to five-layer. We find that the transmission is strongly suppressed particularly near the band touching point, suggesting that the electronic conductivity in general multilayer gr...
2 CitationsSource
#1Gyeong Hee Ryu (UNIST: Ulsan National Institute of Science and Technology)H-Index: 15
#2Hyo Ju Park (UNIST: Ulsan National Institute of Science and Technology)H-Index: 10
Last. Zonghoon Lee (UNIST: Ulsan National Institute of Science and Technology)H-Index: 34
view all 11 authors...
The production of holes by electron beam irradiation in hexagonal boron nitride (hBN), which has a lattice similar to that of graphene, is monitored over time using atomic resolution transmission electron microscopy. The holes appear to be initiated by the formation of a vacancy of boron and grow in a manner that retains an overall triangular shape. The hole growth process involves the formation of single chains of B and N atoms and is accompanied by the ejection of atoms and bundles of atoms al...
34 CitationsSource
#1Min Young Na (KIST: Korea Institute of Science and Technology)H-Index: 2
#2Seung-Mo LeeH-Index: 22
Last. Hye Jung Chang (KIST: Korea Institute of Science and Technology)H-Index: 20
view all 4 authors...
Source
#1Kuang HeH-Index: 21
#2Alex W. RobertsonH-Index: 27
Last. Jamie H. WarnerH-Index: 47
view all 6 authors...
Graphene has three experimentally confirmed periodic edge terminations, zigzag, reconstructed 5–7, and arm-chair. Theory predicts a fourth periodic edge of graphene called the extended Klein (EK) edge, which consists of a series of single C atoms protruding from a zigzag edge. Here, we confirm the existence of EK edges in both graphene nanoribbons and on the edge of bulk graphene using atomic resolution imaging by aberration-corrected transmission electron microscopy. The formation of the EK edg...
18 CitationsSource
#1Ram Sevak SinghH-Index: 8
#2Roland Yingjie TayH-Index: 15
Last. Edwin Hang Tong TeoH-Index: 22
view all 6 authors...
Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in ...
31 CitationsSource
#1Pablo San-JoseH-Index: 24
#2Roman V. GorbachevH-Index: 35
Last. Francisco GuineaH-Index: 77
view all 5 authors...
Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few millielectronvolts. This behavior has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties with a minimal conductivity of the order of 2e2/h. Here, we propose an explanation for this dichotomy, which is unrelated to electron interactions and based instead on th...
41 CitationsSource
#1Roland Yingjie TayH-Index: 15
#2Mark H. GriepH-Index: 9
Last. Shashi P. KarnaH-Index: 37
view all 8 authors...
Hexagonal-boron nitride (h-BN) or “white graphene” has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective coatings, and dielectric in nanoelectronics that easily exceed the current advertised benefits pertaining to the graphene-based applications. The development of h-BN films using chemical vapor deposition (CVD) ha...
156 CitationsSource
Cited By0
Newest