MoS2 Van der Waals p–n Junctions Enabling Highly Selective Room‐Temperature NO2 Sensor

Volume: 30, Issue: 19
Published: Mar 6, 2020
Abstract
Van der Waals p–n junctions of 2D materials present great potential for electronic devices due to the fascinating properties at the junction interface. In this work, an efficient gas sensor based on planar 2D van der Waals junctions is reported by stacking n‐type and p‐type atomically thin MoS 2 films, which are synthesized by chemical vapor deposition (CVD) and soft‐chemistry route, respectively. The electrical conductivity of the van der Waals...
Paper Details
Title
MoS2 Van der Waals p–n Junctions Enabling Highly Selective Room‐Temperature NO2 Sensor
Published Date
Mar 6, 2020
Volume
30
Issue
19
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.