MoTe2 p–n Homojunctions Defined by Ferroelectric Polarization

Volume: 32, Issue: 16
Published: Feb 27, 2020
Abstract
Doped p-n junctions are fundamental electrical components in modern electronics and optoelectronics. Due to the development of device miniaturization, the emergence of two-dimensional (2D) materials may initiate the next technological leap toward the post-Moore era owing to their unique structures and physical properties. The purpose of fabricating 2D p-n junctions has fueled many carrier-type modulation methods, such as electrostatic doping,...
Paper Details
Title
MoTe2 p–n Homojunctions Defined by Ferroelectric Polarization
Published Date
Feb 27, 2020
Volume
32
Issue
16
Citation AnalysisPro
  • Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
  • Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.