Review paper
MoTe2 p–n Homojunctions Defined by Ferroelectric Polarization
Abstract
Doped p-n junctions are fundamental electrical components in modern electronics and optoelectronics. Due to the development of device miniaturization, the emergence of two-dimensional (2D) materials may initiate the next technological leap toward the post-Moore era owing to their unique structures and physical properties. The purpose of fabricating 2D p-n junctions has fueled many carrier-type modulation methods, such as electrostatic doping,...
Paper Details
Title
MoTe2 p–n Homojunctions Defined by Ferroelectric Polarization
Published Date
Feb 27, 2020
Journal
Volume
32
Issue
16
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