Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands

Ferroelectrics exhibit polarization tunable resistance switching behaviors, which are promising for next-generation non-volatile memory devices. For technological applications, thinner nanoscale arrays are expected, which feature with higher density and larger ON/OFF (RON/OFF) ratios in the metal/ferroelectrics/semiconductor heterojunction. Here, we acquire high density BiFeO3 (BFO) nano-islands around 10 nm in thickness displaying a high...